| PART |
Description |
Maker |
| MTY100N10E ON2707 Y100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| FCP-34-SG-E FCP-34-SG |
.100 IDC BOX HEADER .100 X .100 [2.54 X 2.54] CENTERLINE
|
Adam Technologies, Inc.
|
| BHRE10HSGSMTXXX BHRE64HSGAXXX BHRE64HSGSMTXXX BHRE |
.100 ELEVATED BOX HEADERS.100 X .100 [2.54 X 2.54] CENTERLINE
|
Adam Technologies, Inc.
|
| FSR-D2-XX FSR-XX |
.100 IDC SOCKET .100 X .100 [2.54 X 2.54] CENTERLINE
|
Adam Technologies, Inc.
|
| MHF60SGS MHF60SGL MHF20SGL MHF20SGS MHF16SGL MHF16 |
.100 IDC LATCH HEADER .100 X .100 [2.54 X 2.54]
|
Adam Technologies, Inc.
|
| 2415-6272TB 2401-6112TB 2401-6113TB 2401-6122TB 24 |
100 and 100 X 100 Pin Strip Header
|
http://
3M[3M Electronics]
|
| SPP47N10L |
100-V MOS transistors in S-FET technology( 采用S-FET 技术制作的 100-V MOS 型晶体管) 47 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
|
| PDTC115E PDTC115EE PDTC115EEF PDTC115EK PDTC115EM |
NPN resistor-equipped transistors; R1 = 100 kohm, R2 = 100 kohm 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| DNCM01 |
10/100 Ethernet MAC ASIC Macrocell(10/100 以太MAC（媒体访问控制） ASIC宏单
|
Lineage Power
|
| VMIL100 |
100 Watts, 28 Volts, Class AB Defcom 100 - 200 MHz
|
GHZTECH[GHz Technology]
|
| D3408-6002-AR |
Four-Wall Header .100 × .100 Latch/Ejector, Straight and Right Angle
|
3M Electronics
|
